Online ISSN: 1884-4111 Print ISSN: 0033-8303
Radioisotopes 68(6): 423-431 (2019)

Special IssueSpecial Issue

5.2.4 Radiation Hardness Testing for Electronics against High Energy Ions

Department of Advanced Functional Materials Research, Takasaki Advanced Radiation Research Institute, Quantum Beam Science Research Directorate, National Institute for Quantum and Radiological Science and Technology ◇ 1233 Watanuki, Takasaki, Gunma, 370–1292, Japan

発行日:2019年6月15日Published: June 15, 2019

The mechanisms of Single Event Effects (SEEs) on Silicon Carbide (SiC) power devices are becoming clearer. However, to completely understand the mechanisms of SEEs on SiC power devices and to explore radiation hardened technologies for SiC power devices, it is necessary to study the radiation response of SiC power devices using high-energy heavy ions at accelerator facilities such as the Heavy Ion Medical Accelerator in Chiba (HIMAC). The radiation hardening test methodology using high energy heavy ions is reviewed and the application of HIMAC for SEE testing is introduced with recent results from tests of SiC power devices.

Key words: HIMAC (Heavy Ion Medical Accelerator in Chiba); high energy ion; silicon carbide; single event effect

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