Online ISSN: 1884-4111 Print ISSN: 0033-8303
Radioisotopes 66(11): 567-577 (2017)

特集Special Issues

22 イオンビーム照射ポリマーの化学構造22 Chemical Structure of the Ion Beam Irradiated Polymer

大阪市立大学大学院工学研究科化学生物系専攻Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka City University ◇ 558–8585 大阪市住吉区杉本3–3–138 ◇ 3–3–138 Sugimoto, Sumiyoshi-ku, Osaka 558–8585, Japan

発行日:2017年11月15日Published: November 15, 2017


We investigated the chemical structure of positive-tone novolak photoresists into which B, P, and As ions were implanted with doses of 5×1012 to 5×1015 atoms/cm2. The thickness of the surface-hardened layer of ion-implanted photoresists increased in the order As–P–B. The energy supplied from the ions to the photoresist concentrated on the surface side in the increasing order of B–P–As. The photoresists are exhibitting carbonization and/or cross-linkage attributable to the decrease in OH, CH, and O1s and the increase in C=C, C1s, and π-conjugated systems.

Key words: ion beam irradiated polymer; chemical structure; ion implantation photoresist; resist removal; cross-linking

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